|
Up
| |
| Sample04 |
| Mode:
CMPSingleSidePolishingWaferRigidPeriodic |
| ILD 2-Dimensional Simulation by
Periodic Pattern |
| Computational Time (PentiumIII
929MHz) |
| FMatrix Generation and Inversing |
7 sec |
| Removal (1 sec x 60 CMP steps) |
13 sec |
| Total |
20 sec |
|
Film Height at 40 sec |
Pressure Distribution at 0 sec |
Reference:
"Three-Dimensional Chemical-Mechanical Polishing Process Model by
BEM", Electrochem. Soc. & Jpn, Appl. Phys. Joint Internl. Meeting,
Proc. 3rd Internl. Symp. CMP in IC Device Manufacturing, 593 (1999)
"A Model of Stacked Polishing Pad for 3-D CMP Simulation",
Electrochem. Soc. & Jpn, Appl. Phys. Joint Internl. Meeting, Proc.
3rd Internl. Symp. CMP in IC Device Manufacturing, 625 (1999)
"Three-Dimensional CMP Process Model for Composite Film with
Periodic Patterns by BEM", Proc. CMP-MIC, 151 (2003)
|
|
