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Up
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| Sample10 |
| Mode:
CMPSingleSidePolishingWaferRigidWithRefPln |
Zoom In of STI Dram Structure,
Using Trend Data of Sample08 R2C18 for Reference Plane and Pressure |
| Computational Time (PentiumIII
929MHz) |
| FMatrix Generation and Inversing |
3 min 00 sec |
| Removal (1 sec x 300 CMP steps) |
0 min 58 sec |
| Total |
3 min 58 sec |
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Film Height at 140 sec |
Pressure Distribution at 140 sec |
Reference:
"Three-Dimensional Chemical-Mechanical Polishing Process Model by
BEM", Electrochem. Soc. & Jpn, Appl. Phys. Joint Internl. Meeting,
Proc. 3rd Internl. Symp. CMP in IC Device Manufacturing, 593 (1999)
"A Model of Stacked Polishing Pad for 3-D CMP Simulation",
Electrochem. Soc. & Jpn, Appl. Phys. Joint Internl. Meeting, Proc.
3rd Internl. Symp. CMP in IC Device Manufacturing, 625 (1999)
"Three-Dimensional CMP Process Model for Composite Film with
Periodic Patterns by BEM", Proc. CMP-MIC, 151 (2003)
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