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Up
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| Sample35 |
| Mode:
CMPSingleSidePolishingWaferRigidWithRefPln |
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Poly-Si Damascene CMP Simulation
with Pad Asperity Parameters |
| Computational Time (PentiumIII
929MHz) |
| FMatrix Generation and Inversing |
20 min 48 sec |
| Removal (1 sec x 120 CMP steps) |
03 min 11 sec |
| Total |
23 min 59 sec |
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Surface Profile |
Cross Section |
Reference:
"Pad
Asperity Parameters for CMP Process Simulation", Proc. MRS,
K8.4 (2004)
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